We provide InGaAsP/InGaAs epi on InP substrates as follows:

1.Structure: 1.55um InGaAsP QW laser

No.                     Layer                           Doping

0                InP Substrate                       S-doped, 2E18/cm-3

1               n-InP buffer                           1.0um, 2E18/cm-3

2               1.15Q-InGaAsP waveguide        80nm,undoped

3              1.24Q-InGaAsP waveguide         70nm,undoped

4              4×InGaAsP QW(+1%)             5nm
                5×InGaAsP Barrier                       10nm

5         1.24Q-InGaAsP waveguide             70nm,undoped

6        1.15Q-InGaAsP waveguide              80nm,undoped

7         InP space layer                                    20nm,undoped

8          InP                                                         100nm,5E17

9         InP                                                          1200 nm, 1.5E18

10              InGaAs                                            100 nm, 2E19


1)   Method: MOCVD

2)   Size of wafer: 2”

3)   InGaAsP/InGaAs  growth on InP substrates

4)   3-5 types of InGaAsP composition

5)   PL tolerance of +/- 5nm, PL std. dev. <3nm across the wafer (with an exclusion zone of 5mm from the wafer circumference)

6)   PL target range 1500nm.

7)   Strain target -1.0% +/- 0.1% (compressive strain)

8)    No. of layers: 8-20

9)   Total growth thickness: 1.0~3.0um

10)   Parameters to be measured: X-Ray Diffraction Measurement (thickness, strain), Photoluminescence Spectrum (PL, PL uniformity), Carrier Concentration Profiling

We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured

with a fiber-based 1550 nm time-resolved differential transmission (∆T) set-up. The InGaAs-based materials show a positive ∆T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ∆T consistent with a two-photon absorption


Source: PAM-XIAMEN, American Chemical Society

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