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We provide InGaAsP/InGaAs epi on InP substrates as follows:
1.Structure: 1.55um InGaAsP QW laser
No. Layer Doping
0 InP Substrate S-doped, 2E18/cm-3
1 n-InP buffer 1.0um, 2E18/cm-3
2 1.15Q-InGaAsP waveguide 80nm,undoped
3 1.24Q-InGaAsP waveguide 70nm,undoped
4 4×InGaAsP QW（+1%） 5nm
5×InGaAsP Barrier 10nm
PL:1550nm
5 1.24Q-InGaAsP waveguide 70nm,undoped
6 1.15Q-InGaAsP waveguide 80nm,undoped
7 InP space layer 20nm,undoped
8 InP 100nm,5E17
9 InP 1200 nm, 1.5E18
10 InGaAs 100 nm, 2E19
2.Specification:
1) Method: MOCVD
2) Size of wafer: 2”
3) InGaAsP/InGaAs growth on InP substrates
4) 3-5 types of InGaAsP composition
5) PL tolerance of +/- 5nm, PL std. dev. <3nm across the wafer (with an exclusion zone of 5mm from the wafer circumference)
6) PL target range 1500nm.
7) Strain target -1.0% +/- 0.1% (compressive strain)
8) No. of layers: 8-20
9) Total growth thickness: 1.0~3.0um
10) Parameters to be measured: X-Ray Diffraction Measurement (thickness, strain), Photoluminescence Spectrum (PL, PL uniformity), Carrier Concentration Profiling
We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured
with a fiber-based 1550 nm time-resolved differential transmission (∆T) set-up. The InGaAs-based materials show a positive ∆T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ∆T consistent with a two-photon absorption
process.
Source: PAM-XIAMEN, American Chemical Society
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